feb.1999 fs30vsj-3 outline drawing dimensions in mm to-220s mitsubishi nch power mosfet fs30vsj-3 high-speed switching use application motor control, lamp control, solenoid control dc-dc converter, etc. v v a a a a a w c c g 150 20 30 120 30 30 120 70 C55 ~ +150 C55 ~ +150 1.2 v gs = 0v v ds = 0v l = 100 m h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v dss v gss i d i dm i da i s i sm p d t ch t stg symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 4v drive v dss ................................................................................ 150v r ds (on) (max) .............................................................. 86m w i d ......................................................................................... 30a integrated fast recovery diode (typ.) ........... 100ns 10.5max. 1.3 1.5max. qwe r 4.5 0 +0.3 ? 3.0 +0.3 ?.5 1 5 0.8 8.6 0.3 9.8 0.5 1.5max. (1.5) 0.5 4.5 2.6 0.4 b q gate w drain e source r drain wr q e
feb.1999 v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) t rr mitsubishi nch power mosfet fs30vsj-3 high-speed switching use v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 150 1.0 1.5 66 69 0.99 38 3000 320 160 22 42 280 130 1.0 100 0.1 0.1 2.0 86 90 1.29 1.5 1.78 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = 150v, v gs = 0v i d = 1ma, v ds = 10v i d = 15a, v gs = 10v i d = 15a, v gs = 4v i d = 15a, v gs = 10v i d = 15a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 80v, i d = 15a, v gs = 10v, r gen = r gs = 50 w i s = 15a, v gs = 0v channel to case i s = 30a, dis/dt = C100a/ m s performance curves 0 20 40 60 80 100 0 200 50 100 150 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0 t c = 25? pulse test 2.5v 3v 2v v gs = 10v 5v 4v power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 10 0 3 5 7 10 1 2 3 5 7 10 2 2 3 2 3 5 7 10 1 210 2 357 357 2 10 2 357 23 tw = 10 m s 100 m s 1ms 10ms dc t c = 25? single pulse 100ms 5v 0 10 20 30 40 50 012345 v gs = 10v t c = 25? pulse test 4v 3v p d = 70w
feb.1999 mitsubishi nch power mosfet fs30vsj-3 high-speed switching use 100 0 20 40 60 80 10 0 357 2 10 1 357 2 10 2 357 23 v gs = 4v t c = 25 c pulse test 10v 0 1 2 3 4 5 0246810 i d = 50a t c = 25 c pulse test 30a 10a 0 10 20 30 40 50 0246810 t c = 25 c v ds = 10v pulse test 10 2 3 5 7 10 3 2 3 5 7 10 4 2 3 2 5 7 10 0 210 1 357 357 2 10 2 357 23 2 ciss crss coss t ch = 25 c v gs = 0v f = 1mh z on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) 10 0 10 1 23457 10 2 23457 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 t c = 25 c 75 c 125 c v ds = 10v pulse test 10 0 10 1 23457 10 2 23457 10 1 10 2 2 3 4 5 7 10 3 2 3 4 5 7 t r t d(off) t f t d(on) t ch = 25 c v dd = 80v v gs = 10v r gen = r gs = 50 w
feb.1999 0 2 4 6 8 10 0 20406080100 v ds = 50v 80v 100v t ch = 25 c i d = 30a 10 ? 10 0 2 3 4 5 7 10 1 2 3 4 5 7 ?0 0 50 100 150 v gs = 10v i d = 1/2i d pulse test 0 0.8 1.6 2.4 3.2 4.0 ?0 0 50 100 150 v ds = 10v i d = 1ma 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = 1ma 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 t c = 125 c 75 c 25 c v gs = 0v pulse test gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) ( c/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25 c) channel temperature tch ( c) drain-source breakdown voltage v (br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) 10 ? 10 ? 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? 0.5 single pulse 0.2 0.1 0.05 0.02 0.01 d = 1.0 p dm tw d = t tw t mitsubishi nch power mosfet fs30vsj-3 high-speed switching use
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